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T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 1 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers ordering information part eccn description T1G3000532-SM ear99 qfn packaged part T1G3000532-SM- evb ear99 0.5 ? 3 ghz evb product features ? frequency: 30 mhz to 3.5 ghz ? output power (p 3db ): 5.7 w at 3.0 ghz ? linear gain: 15.7 db at 3 ghz ? typical pae 3db : 64.7% at 3ghz ? operating voltage: 32 v ? low thermal resistance package ? cw and pulse capable functional block diagram pin configuration pin no. label 20 - 21 v d / rf out 5 v g / rf in 11 off-chip shunt cap for low- frequency gain back side source general description the triquint T1G3000532-SM is a 5w (p 3db ), 50 - input matched discrete gan on sic hemt which operates from 30mhz to 3.5 ghz. the device is constructed with triquint?s proven tqgan25 process , which features advanced field plate techniques to optimize power a nd efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line- ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request.
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 2 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value breakdown voltage (bv dg ) 100 v gate voltage range (v g ) -50 to 0 v drain current (i d ) 0.6 a gate current (i g ) -1.25 to 2.1 ma power dissipation (p d ) 7.5 w rf input power, cw, t = 25c (p in ) 25 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature -40 to 150 c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation of th e device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 32 v (typ.) drain quiescent current (i dq ) 25 ma (typ.) peak drain current ( i d ) 326 ma (typ.) gate voltage (v g ) -2.7 v (typ.) channel temperature (t ch ) 225 c (max) power dissipation, cw (p d ) 7.05 w (max) power dissipation, pulse (p d ) 9.1 w (max) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. rf characterization ? load pull performance at 1.5 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain, power tuned 17.5 db p 3db output power at 3 db gain compression, power tuned 5.5 w pae 3db power-added efficiency at 3 db gain compression, efficiency tuned 70.5 % g 3db gain at 3 db compression, power tuned 14.5 db rf characterization ? load pull performance at 1.0 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain, power tuned 16.5 db p 3db output power at 3 db gain compression, power tuned 5.9 w pae 3db power-added efficiency at 3 db gain compression, efficiency tuned 77.3 % g 3db gain at 3 db compression, power tuned 13.5 db
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 3 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com rf characterization ? load pull performance at 2.0 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain, power tuned 17.3 db p 3db output power at 3 db gain compression, power tuned 6.5 w pae 3db power-added efficiency at 3 db gain compression, efficiency tuned 68.3 % g 3db gain at 3 db compression, power tuned 14.3 db rf characterization ? load pull performance at 3.0 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain, power tuned 15.7 db p 3db output power at 3 db gain compression, power tuned 5.7 w pae 3db power-added efficiency at 3 db gain compression, efficiency tuned 64.7 % g 3db gain at 3 db compression, power tuned 12.7 db rf characterization ? load pull performance at 3.5 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain, power tuned 14.3 db p 3db output power at 3 db gain compression, power tuned 5 w pae 3db power-added efficiency at 3 db gain compression, efficiency tuned 54.9 % g 3db gain at 3 db compression, power tuned 11.3 db
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 4 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com rf characterization ? evb performance at 3.0 ghz test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma, pulse: 100us pulse width, 20% duty cycle symbol parameter min typical max units g lin linear gain 15.8 db p 3db output power at 3 db gain compression 4.38 w de 3db drain efficiency at 3 db gain compression 48.9 % g 3db gain at 3 db compression 12.8 db rf characterization ? mismatch ruggedness at 3.0 gh z test conditions unless otherwise noted: t a = 25 c, v d = 32 v, i dq = 25 ma driving input power is determined at 1db cw compres sion under matched condition at evb output connecto r. symbol parameter typical vswr impedance mismatch ruggedness 10:1
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 5 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information (1) parameter test conditions value units thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 1.25 w pdiss, 100us pw, 20% 5.60 oc/w channel temperature (t ch ) 92 c median lifetime (t m ) 5.0e12 hrs thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 2.50 w pdiss, 100us pw, 20% 5.60 oc/w channel temperature (t ch ) 99 c median lifetime (t m ) 1.7e12 hrs thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 3.75 w pdiss, 100us pw, 20% 5.33 oc/w channel temperature (t ch ) 105 c median lifetime (t m ) 7.3e11 hrs thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 5 w pdiss, 100us pw, 20% 5.40 oc/w channel temperature (t ch ) 112 c median lifetime (t m ) 2.8e11 hrs thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 6.25 w pdiss, 100us pw, 20% 5.44 oc/w channel temperature (t ch ) 119 c median lifetime (t m ) 1.1e11 hrs thermal resistance ( jc ) vds = 32v, idq = 25ma 85 c case 5 w pdiss, cw 18.4 oc/w channel temperature (t ch ) 177 c median lifetime (t m ) 1.4e08 hrs notes: 1. thermal resistance measured to bottom of package .
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 6 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com median lifetime maximum channel temperature 80 100 120 140 160 180 200 220 240 260 280 300 320 340 1 2 3 4 5 6 7 8 9 10 peak temperature, c cw power dissipation, w peak temperature vs. cw power for fixed 85 c bound ary condition package base held at 85c 225 c
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 7 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load-pu ll system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. 32v, 25ma, pulsed signal with 100us pulse width and 20% duty cycle. 3db compression reference at p in_ref. 2. see page 18 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1 . 8 2 1ghz, load-pull 37.6 37.3 37 14.5 14 13.5 75.3 72.3 69.3 max power is 37.7dbm at z = 57.838+20.992i ? ? = 0.1065+0.1739i max gain is 14.6db at z = 70.595+66.488i ? ? = 0.3641+0.3506i max pae is 77.3% at z = 52.124+93.556i ? ? = 0.4676+0.4877i zo = 50 ? pin_ref = 8.2dbm zs(fo) = 50.64-2.83i ? zs(2fo) = 41.05-8.09i ? zs(3fo) = 27.65-17.19i ? zl(2fo) = 39.13+10.91i ? zl(3fo) = 84.9-32.33i ? power gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 8 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load-pu ll system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. 32v, 25ma, pulsed signal with 100us pulse width and 20% duty cycle. 3db compression reference at p in_ref. 2. see page 18 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1 . 8 2 1.5ghz, load-pull 37.2 36.9 36.6 14.7 14.2 13.7 70.1 67.1 64.1 max power is 37.4dbm at z = 53.817+36.137i ? ? = 0.1409+0.2991i max gain is 15.1db at z = 47.985+74.274i ? ? = 0.3519+0.4913i max pae is 70.5% at z = 51.155+61.234i ? ? = 0.2765+0.438i zo = 50 ? pin_ref = 9.5dbm zs(fo) = 50.27+0.87i ? zs(2fo) = 27.91-9.88i ? zs(3fo) = 24.65-0.61i ? zl(2fo) = 30.31-35.73i ? zl(3fo) = 29.83+13.63i ? power gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 9 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load-pu ll system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. 32v, 25ma, pulsed signal with 100us pulse width and 20% duty cycle. 3db compression reference at p in_ref. 2. see page 18 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1 . 8 2 2ghz, load-pull 37.9 37.6 37.3 15.4 14.9 14.4 67.4 64.4 61.4 max power is 38.1dbm at z = 54.471+21.375i ? ? = 0.0813+0.188i max gain is 15.7db at z = 25.228+50.331i ? ? = 0.0817+0.6144i max pae is 68.3% at z = 58.403+57.725i ? ? = 0.2813+0.3827i zo = 50 ? pin_ref = 10dbm zs(fo) = 51.83-0.59i ? zs(2fo) = 40.26-6i ? zs(3fo) = 18.11-5.48i ? zl(2fo) = 6.44-2.56i ? zl(3fo) = 11.62-41.47i ? power gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 10 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load-pu ll system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. 32v, 25ma, pulsed signal with 100us pulse width and 20% duty cycle. 3db compression reference at p in_ref. 2. see page 18 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 1 . 8 2 3ghz, load-pull 37.3 37 36.7 13.4 12.9 12.4 63.2 60.2 57.2 max power is 37.6dbm at z = 41.288+18.488i ? ? = -0.0523+0.2131i max gain is 13.6db at z = 17.228+27.075i ? ? = -0.2799+0.5155i max pae is 64.7% at z = 29.369+44.144i ? ? = 0.0377+0.5352i zo = 50 ? pin_ref = 7.3dbm zs(fo) = 51.07-1.59i ? zs(2fo) = 13.41-4.88i ? zs(3fo) = 0 ? zl(2fo) = 18.54-23.81i ? zl(3fo) = 0 ? power gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 11 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load-pu ll system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. 32v, 25ma, pulsed signal with 100us pulse width and 20% duty cycle. 3db compression reference at p in_ref. 2. see page 18 for load pull and source pull reference planes. 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 0 . 6 0 . 7 0 . 8 0 . 9 1 1 . 2 1 . 4 1 . 6 3.5ghz, load-pull 37 36.7 36.4 11.7 11.2 10.7 52.6 49.6 46.6 max power is 37dbm at z = 38.189+19.398i ? ? = -0.0816+0.2379i max gain is 11.8db at z = 20.13+24.933i ? ? = -0.2659+0.4501i max pae is 54.9% at z = 26.394+33.042i ? ? = -0.1027+0.4769i zo = 50 ? pin_ref = 3.6dbm zs(fo) = 48.9-0.78i ? zs(2fo) = 34.82+0.02i ? zs(3fo) = 0 ? zl(2fo) = 32.86-40.89i ? zl(3fo) = 0 ? power gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 12 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance ? power tuned (1,2 ,3 ) notes: 1. pulsed signal with 100us pulse width and 20% dut y cycle 2. see page 18 for load pull and source pull refere nce planes. 3. performance is measured at device reference planes. 24 26 28 30 32 34 36 38 10 11 12 13 14 15 16 17 18 19 20 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 1ghz, vds =32v, idq =25ma, 100us, 20%, power tuned zs = 50.6-j2.83 ? zl = 57.8+j21.0 ? 24 26 28 30 32 34 36 38 0 8 16 24 32 40 48 56 64 72 80 pae [%] gain pae 26 28 30 32 34 36 38 10 11 12 13 14 15 16 17 18 19 20 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 1.5ghz, vds =32v, idq =25ma, 100us, 20%, power tuned zs = 50.3+j0.87 ? zl = 53.8+j36.1 ? 26 28 30 32 34 36 38 20 25 30 35 40 45 50 55 60 65 70 pae [%] gain pae 26 28 30 32 34 36 38 40 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 2ghz, vds =32v, idq =25ma, 100us, 20%, power tuned zs = 51.8-j0.59 ? zl = 54.5+j21.4 ? 26 28 30 32 34 36 38 40 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 22 24 26 28 30 32 34 36 38 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 3ghz, vds =32v, idq =25ma, 100us, 20%, power tuned zs = 51.1-j1.59 ? zl = 41.3+j18.5 ? 22 24 26 28 30 32 34 36 38 10 15 20 25 30 35 40 45 50 55 60 pae [%] gain pae 17 19 21 23 25 27 29 31 33 35 37 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 3.5ghz, vds =32v, idq =25ma, 100us, 20%, power tune d zs = 48.9-j0.78 ? zl = 38.2+j19.4 ? 17 19 21 23 25 27 29 31 33 35 37 0 5 10 15 20 25 30 35 40 45 50 pae [%] gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 13 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance ? efficiency tuned (1,2 ,3 ) notes: 4. pulsed signal with 100us pulse width and 20% dut y cycle 5. see page 18 for load pull and source pull refere nce planes. 6. performance is measured at device reference plan es. 22 24 26 28 30 32 34 36 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 3ghz, vds =32v, idq =25ma, 100us, 20%, efficiency t uned zs = 51.1-j1.59 ? zl = 29.4+j44.1 ? 22 24 26 28 30 32 34 36 0 8 16 24 32 40 48 56 64 72 80 pae [%] gain pae 17 19 21 23 25 27 29 31 33 35 37 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 3.5ghz, vds =32v, idq =25ma, 100us, 20%, efficiency tuned zs = 48.9-j0.78 ? zl = 26.4+j33.0 ? 17 19 21 23 25 27 29 31 33 35 37 0 8 16 24 32 40 48 56 64 72 80 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 14 14.5 15 15.5 16 16.5 17 17.5 18 18.5 19 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 1.5ghz, vds =32v, idq =25ma, 100us, 20%, efficiency tuned zs = 50.3+j0.87 ? zl = 51.2+j61.2 ? 27 28 29 30 31 32 33 34 35 36 37 25 30 35 40 45 50 55 60 65 70 75 pae [%] gain pae 27 28 29 30 31 32 33 34 35 36 37 38 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 2ghz, vds =32v, idq =25ma, 100us, 20%, efficiency t uned zs = 51.8-j0.59 ? zl = 58.4+j57.7 ? 27 28 29 30 31 32 33 34 35 36 37 38 20 25 30 35 40 45 50 55 60 65 70 pae [%] gain pae 25 26 27 28 29 30 31 32 33 34 35 10 11 12 13 14 15 16 17 18 19 20 output power [dbm] gain [db] T1G3000532-SM gain and pae vs. output power 1ghz, vds =32v, idq =25ma, 100us, 20%, efficiency t uned zs = 50.6-j2.83 ? zl = 52.1+j93.6 ? 25 26 27 28 29 30 31 32 33 34 35 20 28 36 44 52 60 68 76 84 92 100 pae [%] gain pae
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 14 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board performance over temperature (1, 2) performance measured on triquint?s 0.5 ghz to 3 gh z evaluation board notes: 1. test conditions: v ds = 32 v, i dq = 25 ma 2. test signal: pulse width = 100 s, duty cycle = 20% 3.5 4.0 4.5 5.0 5.5 6.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 p3db [w] frequency [ghz] p3db vs. frequency vs. temperature - 40 c -20c 0 c 25 c 45c 65 c 85 c 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 g3db [db] frequency [ghz] g3db vs. frequency vs. temperature -40c - 20 c 0 c 25c 45 c 65 c 85 c 30 35 40 45 50 55 60 65 70 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 pae3db [%] frequency [ghz] pae3db vs. frequency vs. temperature - 40 c -20c 0 c 25 c 45c 65 c 85 c
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 15 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board performance at 25c (1, 2) performance measured on triquint?s 0.5 ghz to 3.0 ghz evaluation board notes: 1. test conditions: v ds = 32 v, i dq = 25 ma, 25c 2. test signal: pulse width = 100 s, duty cycle = 20 % 12.5 12.8 13.0 13.3 13.5 13.8 14.0 14.3 14.5 14.8 15.0 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 g3db [db] p3db [w] frequency [ghz] p3db and g3db vs. frequency @ 25c p3db g3db 40 42 44 46 48 50 52 54 56 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 pae3db [%] frequency [ghz] pae3db vs. frequency @ 25c
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 16 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit bias-down procedure turn off rf signal turn off v d and wait 1 second to allow drain capacitor dissipation turn off v g bias-up procedure set gate voltage (v g ) to -5.0v set drain voltage (v d ) to 32 v slowly increase v g until quiescent i d is 25 ma. apply rf signal
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 17 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout top rf layer is 0.020? thick rogers ro4350b, ? r = 3.48. the pad pattern shown has been developed a nd tested for optimized assembly at triquint semiconductor. the pcb land pa ttern has been developed to accommodate lead and pa ckage tolerances. bill of materials reference design value qty manufacturer part number r1 0 dnp r2 0 dnp r3 0 1 generic 0603 r4 1 0 1 venkel erj-3ekf10r10v r5 1k 1 venkel 0603 c1 10uf 1 c1632x5r0j106m130ac c2, c5 56pf 2 atc 600s560bt250xt c3 1uf 1 avx 18121c105kat2a c4 220uf 1 united chem con emvy500aea221mja0g l1 240nh 1 coilcraft 0805cs-241x_bl l2 22nh 1 coilcraft 0805cs_220x_l_
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 18 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin layout pin description pin symbol description 20, 21 v d / rf out drain voltage / rf output to be matched to 50 ohms; see evb layout on page 14 as an example. 5 v g / rf in gate voltage / rf input to be matched to 50 ohms; s ee evb layout on page 14 as an example. 11 off-chip cap off-chip cap to extend low frequency gain. back side souce source connected to ground notes: thermal resistance measured to back side of package the T1G3000532-SM will be marked with the ?0532? de signator and a lot code marked below the part desig nator the ?yy? represents the last two digits of the calendar year the part was manufactured, the ?ww? is the work we ek of the assembly lot start, and the ?mxxx? is the production lot number.
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 19 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information all dimensions are in milimeters. note: unless otherwise noted, all dimention toleranc es are +/-0.127 mm. this package is lead-free/rohs-compliant. the plati ng material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (m aximum 245c reflow temperature) soldering processe s.
datasheet: rev 001- 06-13-14 ? 2014 triquint product compliance information esd sensitivity ratings caution! esd- sensitive device esd rating: class 1a value: passes 350 v min. test: human body model (hbm) standard: jedec standard jesd22- a114 msl rating the part is rated moisture sensitivity level 3 at 2 60c per jedec standard ipc/jedec j-std-020. eccn us department of commerce ear99 recommended soldering temperature profile t1g3000532 5w, 32v, 0.03 ? 3.5 ghz, gan rf input - - 20 of 21 - disclaimer: subject to change without notice information sensitive device a114 solderability compatible with the latest version of j free solder, 260 c rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free the part is rated moisture sensitivity level 3 at 2 60c per recommended soldering temperature profile t1g3000532 -sm - matched transistor disclaimer: subject to change without notice www.triquint.com version of j -std- 020, lead compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: halogen free (chlorine, bromine) ) free
T1G3000532-SM 5w, 32v, 0.03 ? 3.5 ghz, gan rf input-matched trans istor datasheet: rev 001- 06-13-14 - 21 of 21 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the informat ion contained herein. triquint assumes no responsibility or liability wha tsoever for any of the information contained herein. triquint assumes no responsibility or liab ility whatsoever for the use of the information con tained herein. the information contained herein is provided "as is, wh ere is" and with all faults, and the entire risk as sociated with such information is entirely with the user. all information contained herein is subject to chan ge without notice. customers should obtain and verify the latest relev ant information before placing orders for triquint products. the information contained herein or any use of such inf ormation does not grant, explicitly or implicitly, to any party a ny patent rights, licenses, or any other intellectual property rights, whether with regard to such inform ation itself or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reasonably be expected to cause s evere personal injury or death.

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